AVALANCHE ENERGY RATING (EAS):  60 MJ

BRAND NAME:  ON SEMICONDUCTOR

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  30 V

DRAIN CURRENT-MAX (ABS) (ID):  68 A

DRAIN CURRENT-MAX (ID):  13 A

DRAIN-SOURCE ON RESISTANCE-MAX:  10 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSIP-T3

JESD-609 CODE:  E3

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  369D

MANUFACTURER PART NUMBER:  NTD4965N-1G

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  IN-LINE, R-PSIP-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  38.5 W

PULSED DRAIN CURRENT-MAX (IDM):  248 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON