CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 3A (TA) 1.3W (TA) SURFACE MOUNT SOT-223 (TO-261)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  22NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  455PF @ 25V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTF3055-100T1G

MANUFACTURER STANDARD LEAD TIME:  27 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.3W (TA)

RDS ON (MAX) @ ID, VGS:  110 MOHM @ 1.5A, 10V

SUPPLIER DEVICE PACKAGE:  SOT-223 (TO-261)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA