CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.6A, 1.9A

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 30V 2.6A, 1.9A 900MW SURFACE MOUNT 6-TSOP

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  5.5NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  295PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTGD4167CT1G

MANUFACTURER STANDARD LEAD TIME:  30 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER - MAX:  900MW

RDS ON (MAX) @ ID, VGS:  90 MOHM @ 2.6A, 4.5V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-TSOP

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA