CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.2A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 20V 2.2A (TA) 500MW (TA) SURFACE MOUNT 6-TSOP

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  15NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  565PF @ 5V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTGS3443T1G

MANUFACTURER STANDARD LEAD TIME:  36 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  500MW (TA)

RDS ON (MAX) @ ID, VGS:  65 MOHM @ 4.4A, 4.5V

SUPPLIER DEVICE PACKAGE:  6-TSOP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA