CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.2A (TJ)

DETAILED DESCRIPTION:  P-CHANNEL 20V 3.2A (TJ) 1.1W (TA) SURFACE MOUNT CHIPFET?

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET FEATURE:  SCHOTTKY DIODE (ISOLATED)

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  7.4NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  680PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTHD3101FT1G

MANUFACTURER STANDARD LEAD TIME:  19 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SMD, FLAT LEAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.1W (TA)

RDS ON (MAX) @ ID, VGS:  80 MOHM @ 3.2A, 4.5V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  CHIPFET?

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA