BRAND NAME:  ON SEMICONDUCTOR

CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

DS BREAKDOWN VOLTAGE-MIN:  20 V

DRAIN CURRENT-MAX (ABS) (ID):  1.1 A

DRAIN CURRENT-MAX (ID):  630 MA

DRAIN-SOURCE ON RESISTANCE-MAX:  375 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  5 PF

JESD-30 CODE:  R-PDSO-G6

JESD-609 CODE:  E3

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  419B-02

MANUFACTURER PART NUMBER:  NTJD4105CT2G

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-88

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  6

POLARITY/CHANNEL TYPE:  N-CHANNEL AND P-CHANNEL

POWER DISSIPATION-MAX (ABS):  550 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON