NTLJD3115PT1G

Factory Authorized Line

ON SEMICONDUCTOR

Electronic Component

NTLJD3115PT1G

- FETs - Arrays 1V @ 250µA, 20V
Call for availability ON SEMICONDUCTOR
Mfr Part # NTLJD3115PT1G
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  6-WDFN EXPOSED PADPACKAGING:  REELSTANDARD PACKAGE:  3,000SUPPLIER DEVICE PACKAGE:  6-WDFN (2X2)
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.3A

DETAILED DESCRIPTION:  MOSFET ARRAY 2 P-CHANNEL (DUAL) 20V 2.3A 710MW SURFACE MOUNT 6-WDFN (2X2)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 P-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  6.2NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  531PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTLJD3115PT1G

MANUFACTURER STANDARD LEAD TIME:  41 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-WDFN EXPOSED PAD

PACKAGING:  REEL

POWER - MAX:  710MW

RDS ON (MAX) @ ID, VGS:  100 MOHM @ 2A, 4.5V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-WDFN (2X2)

VGS(TH) (MAX) @ ID:  1V @ 250ΜA