Electronic Component
NTLJD3115PT1G
- FETs - Arrays 1V @ 250µA, 20VAvailability
- Qty in StockCall for availability
- Min. Order Qty1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.3A
DETAILED DESCRIPTION: MOSFET ARRAY 2 P-CHANNEL (DUAL) 20V 2.3A 710MW SURFACE MOUNT 6-WDFN (2X2)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 P-CHANNEL (DUAL)
GATE CHARGE (QG) (MAX) @ VGS: 6.2NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 531PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NTLJD3115PT1G
MANUFACTURER STANDARD LEAD TIME: 41 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 6-WDFN EXPOSED PAD
PACKAGING: REEL
POWER - MAX: 710MW
RDS ON (MAX) @ ID, VGS: 100 MOHM @ 2A, 4.5V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 6-WDFN (2X2)
VGS(TH) (MAX) @ ID: 1V @ 250ΜA


