CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.6A, 2.3A

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

EXPANDED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 20V 2.6A, 2.3A 710MW SURFACE MOUNT 6-WDFN (2X2)

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  3.7NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  271PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTLJD3119CTBG

MANUFACTURER STANDARD LEAD TIME:  35 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-WDFN EXPOSED PAD

PACKAGING:  REEL

POWER - MAX:  710MW

RDS ON (MAX) @ ID, VGS:  65 MOHM @ 3.8A, 4.5V

SERIES:  ΜCOOL?

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-WDFN (2X2)

VGS(TH) (MAX) @ ID:  1V @ 250ΜA