CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.2A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

EXPANDED DESCRIPTION:  N-CHANNEL 30V 1.2A (TA) 500MW (TA) SURFACE MOUNT 6-UDFN (1.6X1.6)

FET FEATURE:  SCHOTTKY DIODE (ISOLATED)

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  3NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  95PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTLUF4189NZTAG

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-UFDFN EXPOSED PAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  500MW (TA)

RDS ON (MAX) @ ID, VGS:  200 MOHM @ 1.5A, 4.5V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-UDFN (1.6X1.6)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA