Electronic Component
NTMD6N03R2G
- FETs - Arrays 2.5V @ 250µA, 30VAvailability
- Qty in StockCall for availability
- Min. Order Qty1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6A
DETAILED DESCRIPTION: MOSFET ARRAY 2 N-CHANNEL (DUAL) 30V 6A 1.29W SURFACE MOUNT 8-SOIC
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 N-CHANNEL (DUAL)
GATE CHARGE (QG) (MAX) @ VGS: 30NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 950PF @ 24V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NTMD6N03R2G
MANUFACTURER STANDARD LEAD TIME: 40 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER - MAX: 1.29W
RDS ON (MAX) @ ID, VGS: 32 MOHM @ 6A, 10V
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SOIC
VGS(TH) (MAX) @ ID: 2.5V @ 250ΜA


