Electronic Component
NTMD6N04R2G
- FETs - Arrays 3V @ 250µA, 40VAvailability
- Qty in StockCall for availability
- Min. Order Qty1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4.6A
DETAILED DESCRIPTION: MOSFET ARRAY 2 N-CHANNEL (DUAL) 40V 4.6A 1.29W SURFACE MOUNT 8-SOIC
DRAIN TO SOURCE VOLTAGE (VDSS): 40V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 N-CHANNEL (DUAL)
GATE CHARGE (QG) (MAX) @ VGS: 30NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 900PF @ 32V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NTMD6N04R2G
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER - MAX: 1.29W
RDS ON (MAX) @ ID, VGS: 34 MOHM @ 5.8A, 10V
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SOIC
VGS(TH) (MAX) @ ID: 3V @ 250ΜA


