CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  16A (TA), 156A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 30V 16A (TA), 156A (TC) 910MW (TA), 125W (TC) SURFACE MOUNT 5-DFN (5X6) (8-SOFL)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  88NC @ 11.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  5600PF @ 12V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTMFS4833NT1G

MANUFACTURER STANDARD LEAD TIME:  42 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN, 5 LEADS

PACKAGING:  REEL

POWER DISSIPATION (MAX):  910MW (TA), 125W (TC)

RDS ON (MAX) @ ID, VGS:  2 MOHM @ 30A, 10V

SUPPLIER DEVICE PACKAGE:  5-DFN (5X6) (8-SOFL)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA

ALTERNATE PARTS:  NTMFS4833NT3G NTMFS4833NT3G