CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  9A (TA), 52A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

EXPANDED DESCRIPTION:  N-CHANNEL 30V 9A (TA), 52A (TC) 760MW (TA) SURFACE MOUNT 5-DFN (5X6) (8-SOFL)

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  1.9NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1252PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS NON-COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTMFS4C09NAT1G

MANUFACTURER STANDARD LEAD TIME:  38 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN, 5 LEADS

PACKAGING:  REEL

POWER DISSIPATION (MAX):  760MW (TA)

RDS ON (MAX) @ ID, VGS:  5.8 MOHM @ 30A, 10V

STANDARD PACKAGE:  1,500

SUPPLIER DEVICE PACKAGE:  5-DFN (5X6) (8-SOFL)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2.1V @ 250ΜA