CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

EXPANDED DESCRIPTION:  N-CHANNEL 30V 760MW (TA) SURFACE MOUNT

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1252PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTMFS4C09NBT1G

MANUFACTURER STANDARD LEAD TIME:  29 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

POWER DISSIPATION (MAX):  760MW (TA)

STANDARD PACKAGE:  1,500

TECHNOLOGY:  MOSFET (METAL OXIDE)

ALTERNATE PARTS:  NTMFS4C09NBT3G