CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  43A (TA), 269A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 25V 43A (TA), 269A (TC) 2.7W (TA), 104W (TC) SURFACE MOUNT 5-DFN (5X6) (8-SOFL)

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  56NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3923PF @ 12V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTMFS4H013NFT1G

MANUFACTURER STANDARD LEAD TIME:  31 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.7W (TA), 104W (TC)

RDS ON (MAX) @ ID, VGS:  0.9 MOHM @ 30A, 10V

STANDARD PACKAGE:  1,500

SUPPLIER DEVICE PACKAGE:  5-DFN (5X6) (8-SOFL)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.1V @ 250ΜA

ALTERNATE PARTS:  NTMFS4H013NFT3G