CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8.8A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 20V 8.8A (TA) 1.6W (TA) SURFACE MOUNT 8-SOIC

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  70NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3640PF @ 16V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTMS10P02R2G

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.6W (TA)

RDS ON (MAX) @ ID, VGS:  14 MOHM @ 10A, 4.5V

SUPPLIER DEVICE PACKAGE:  8-SOIC

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  1.2V @ 250ΜA