CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.95A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 4.5V

EXPANDED DESCRIPTION:  P-CHANNEL 20V 3.95A (TA) 790MW (TA) SURFACE MOUNT 8-SOIC

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  35NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1900PF @ 16V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTMS5P02R2G

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  790MW (TA)

RDS ON (MAX) @ ID, VGS:  33 MOHM @ 5.4A, 4.5V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SOIC

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±10V

VGS(TH) (MAX) @ ID:  1.25V @ 250ΜA