CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  281MA (TA)

DETAILED DESCRIPTION:  P-CHANNEL 20V 281MA (TA) 155MW (TA) SURFACE MOUNT SOT-883 (XDFN3) (1X0.6)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.5V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  1.1NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  44PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTNS3A65PZT5G

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SC-101, SOT-883

PACKAGING:  REEL

POWER DISSIPATION (MAX):  155MW (TA)

RDS ON (MAX) @ ID, VGS:  1.3 OHM @ 200MA, 4.5V

STANDARD PACKAGE:  8,000

SUPPLIER DEVICE PACKAGE:  SOT-883 (XDFN3) (1X0.6)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA