CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  40A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 650V 40A (TC) 313W (TC) THROUGH HOLE TO-220-3

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  81NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3410PF @ 400V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTP082N65S3F

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3

POWER DISSIPATION (MAX):  313W (TC)

RDS ON (MAX) @ ID, VGS:  82 MOHM @ 20A, 10V

SERIES:  FRFET®, SUPERFET® II

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  TO-220-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 4MA