CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

DETAILED DESCRIPTION:  P-CHANNEL 8V 960MW (TA) SURFACE MOUNT SOT-23-3 (TO-236)

DRAIN TO SOURCE VOLTAGE (VDSS):  8V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  15NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1173PF @ 4V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTR2101PT1G

MANUFACTURER STANDARD LEAD TIME:  50 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  960MW (TA)

RDS ON (MAX) @ ID, VGS:  52 MOHM @ 3.5A, 4.5V

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA