CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  16.3A (TA), 64A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

EXPANDED DESCRIPTION:  N-CHANNEL 30V 16.3A (TA), 64A (TC) 1.47W (TA), 22.73W (TC) SURFACE MOUNT 8-WDFN (3.3X3.3)

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  29.4NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2075PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTTFS4985NFTWG

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERWDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.47W (TA), 22.73W (TC)

RDS ON (MAX) @ ID, VGS:  3.5 MOHM @ 20A, 10V

STANDARD PACKAGE:  5,000

SUPPLIER DEVICE PACKAGE:  8-WDFN (3.3X3.3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2.3V @ 250ΜA