CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  9.3A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 9.3A (TA) 820MW (TA), 25.5W (TC) SURFACE MOUNT 8-WDFN (3.3X3.3)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  18.2NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1113PF @ 15V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTTFS4C08NTAG

MANUFACTURER STANDARD LEAD TIME:  40 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERWDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  820MW (TA), 25.5W (TC)

RDS ON (MAX) @ ID, VGS:  5.9 MOHM @ 30A, 10V

SUPPLIER DEVICE PACKAGE:  8-WDFN (3.3X3.3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.2V @ 250ΜA