CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  294MA

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (DUAL)

FAMILY:  FETS - ARRAYS

GATE CHARGE (QG) @ VGS:  0.7NC @ 4.5V

INPUT CAPACITANCE (CISS) @ VDS:  24.5PF @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTZD5110NT1G

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  250MW

RDS ON (MAX) @ ID, VGS:  1.6 OHM @ 500MA, 10V

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-563

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA