CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  915MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 20V 915MA (TA) 300MW (TJ) SURFACE MOUNT SC-89

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.5V, 4.5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  1.82NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  110PF @ 16V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVE4153NT1G

MANUFACTURER STANDARD LEAD TIME:  5 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SC-89, SOT-490

PACKAGING:  REEL

POWER DISSIPATION (MAX):  300MW (TJ)

RDS ON (MAX) @ ID, VGS:  230 MOHM @ 600MA, 4.5V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SC-89

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±6V

VGS(TH) (MAX) @ ID:  1.1V @ 250ΜA