CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.8A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 60V 1.8A (TA) 600MW (TA) SURFACE MOUNT 6-TSOP

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  18.1NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  942PF @ 30V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVGS5120PT1G

MANUFACTURER STANDARD LEAD TIME:  35 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  600MW (TA)

RDS ON (MAX) @ ID, VGS:  111 MOHM @ 2.9A, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-TSOP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA