CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  10A

DETAILED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (DUAL) 60V 10A 3.1W SURFACE MOUNT 8-DFN (5X6) DUAL FLAG (SO8FL-DUAL-ASYMMETRICAL)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  30.5NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1560PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVMFD5873NLWFT1G

MANUFACTURER STANDARD LEAD TIME:  30 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER - MAX:  3.1W

RDS ON (MAX) @ ID, VGS:  13 MOHM @ 15A, 10V

STANDARD PACKAGE:  1,500

SUPPLIER DEVICE PACKAGE:  8-DFN (5X6) DUAL FLAG (SO8FL-DUAL-ASYMMETRICAL)

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA