CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 8A (TA) 3.6W (TA), 39W (TC) SURFACE MOUNT 5-DFN (5X6) (8-SOFL)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  17NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  850PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVMFS5826NLT1G

MANUFACTURER STANDARD LEAD TIME:  31 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.6W (TA), 39W (TC)

RDS ON (MAX) @ ID, VGS:  24 MOHM @ 10A, 10V

STANDARD PACKAGE:  1,500

SUPPLIER DEVICE PACKAGE:  5-DFN (5X6) (8-SOFL)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA

ALTERNATE PARTS:  NVMFS5826NLT3G