CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

DETAILED DESCRIPTION:  N-CHANNEL 100V 3.9W (TA), 198W (TC) SURFACE MOUNT 5-DFN (5X6) (8-SOFL)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  9.4NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  5320PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS NON-COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVMFS6B03NLT1G

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.9W (TA), 198W (TC)

RDS ON (MAX) @ ID, VGS:  4 MOHM @ 20A, 10V

SERIES:  AUTOMOTIVE, AEC-Q101

STANDARD PACKAGE:  1,500

SUPPLIER DEVICE PACKAGE:  5-DFN (5X6) (8-SOFL)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±16V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA

ALTERNATE PARTS:  NVMFS6B03NLT3G