CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  23A (TA), 157A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 80V 23A (TA), 157A (TC) 3.8W (TA), 166W (TC) SURFACE MOUNT 5-DFN (5X6) (8-SOFL)

DRAIN TO SOURCE VOLTAGE (VDSS):  80V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  64NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4120PF @ 40V

LEAD FREE STATUS:  LEAD FREE

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVMFS6H801NWFT1G

MANUFACTURER STANDARD LEAD TIME:  49 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  8-POWERTDFN, 5 LEADS

POWER DISSIPATION (MAX):  3.8W (TA), 166W (TC)

RDS ON (MAX) @ ID, VGS:  2.8 MOHM @ 50A, 10V

SERIES:  AUTOMOTIVE, AEC-Q101

STANDARD PACKAGE:  1,500

SUPPLIER DEVICE PACKAGE:  5-DFN (5X6) (8-SOFL)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA