CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  13A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 13A (TA) 3.1W (TA), 21W (TC) SURFACE MOUNT 8-WDFN (3.3X3.3)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  750PF @ 12V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NVTFS4823NTWG

MANUFACTURER STANDARD LEAD TIME:  40 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  8-POWERWDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.1W (TA), 21W (TC)

RDS ON (MAX) @ ID, VGS:  10.5 MOHM @ 15A, 10V

STANDARD PACKAGE:  5,000

SUPPLIER DEVICE PACKAGE:  8-WDFN (3.3X3.3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA

ALTERNATE PARTS:  NVTFS4823NTAG