CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  600MA

CURRENT - COLLECTOR CUTOFF (MAX):  100NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  80 @ 10MA, 5V

EXPANDED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 160V 600MA 225MW SURFACE MOUNT SOT-23-3 (TO-236)

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  SMMBT5551LT1G

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  225MW

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  200MV @ 5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  160V

ALTERNATE PARTS:  MMBT5551LT3G SMMBT5551LT3G