ADDITIONAL FEATURE:  BUILT IN BIAS RESISITANCE RATIO 4.7

COLLECTOR CURRENT-MAX (IC):  100 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  80

JESD-30 CODE:  R-PDSO-F6

MANUFACTURER:  PANASONIC ELECTRONIC COMPONENTS

MANUFACTURER PART NUMBER:  DMG564040R

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-F6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  NPN AND PNP

POWER DISSIPATION-MAX (ABS):  150 MW

SUBCATEGORY:  BIP GENERAL PURPOSE SMALL SIGNAL

SURFACE MOUNT:  YES

TERMINAL FORM:  FLAT

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON