ADDITIONAL FEATURE:  LOW NOISE

COLLECTOR CURRENT-MAX (IC):  30 MA

COLLECTOR-BASE CAPACITANCE-MAX:  0.7 PF

COLLECTOR-EMITTER VOLTAGE-MAX:  6 V

CONFIGURATION:  SINGLE

DC CURRENT GAIN-MIN (HFE):  75

HIGHEST FREQUENCY BAND:  L BAND

JESD-30 CODE:  R-PDSO-G3

MANUFACTURER:  RENESAS ELECTRONICS CORPORATION

MANUFACTURER PART NUMBER:  2SC5010-T1

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  225

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  NPN

POWER DISSIPATION-MAX (ABS):  125 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  AMPLIFIER

TRANSISTOR ELEMENT MATERIAL:  SILICON

TRANSITION FREQUENCY-NOM (FT):  12 GHZ