CASE CONNECTION:  SOURCE

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  200 V

DRAIN CURRENT-MAX (ID):  8 A

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSFM-T3

JESD-609 CODE:  E0

MANUFACTURER:  RENESAS ELECTRONICS CORPORATION

MANUFACTURER PART NUMBER:  2SJ352

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PSFM-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PART PACKAGE CODE:  TO-3P

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  P-CHANNEL

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  NO

TERMINAL FINISH:  TIN LEAD

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON