CASE CONNECTION:  SOURCE

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  17 V

DRAIN CURRENT-MAX (ABS) (ID):  1 A

DRAIN CURRENT-MAX (ID):  1 A

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

HIGHEST FREQUENCY BAND:  ULTRA HIGH FREQUENCY BAND

JESD-30 CODE:  R-PDSO-G2

MANUFACTURER:  RENESAS ELECTRONICS CORPORATION

MANUFACTURER PART NUMBER:  2SK3390IX

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PIN COUNT:  2

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  20 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  AMPLIFIER

TRANSISTOR ELEMENT MATERIAL:  SILICON