ADDITIONAL FEATURE:  BUILT-IN BIAS RESISTOR RATIO IS 1

COLLECTOR CURRENT-MAX (IC):  100 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  SINGLE WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  95

JESD-30 CODE:  R-PDSO-G3

MANUFACTURER:  RENESAS ELECTRONICS CORPORATION

MANUFACTURER PART NUMBER:  FA1L4M-T2B

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-59

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  NPN

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-MAX (TOFF):  6 ΜS

TURN-ON TIME-MAX (TON):  700 NS

VCESAT-MAX:  200 MV