ADDITIONAL FEATURE:  BUILT-IN BIAS RESISTOR RATIO IS 1

COLLECTOR CURRENT-MAX (IC):  100 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  SINGLE WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  35

JESD-30 CODE:  R-PDSO-G3

MANUFACTURER:  RENESAS ELECTRONICS CORPORATION

MANUFACTURER PART NUMBER:  GN1A4M-T1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-70

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  PNP

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON