CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  33A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  78NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  3900PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  RENESAS ELECTRONICS AMERICA

MANUFACTURER PART NUMBER:  NP33N06YDG-E1-AY

MANUFACTURER STANDARD LEAD TIME:  16 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  175°C (TJ)

PACKAGE / CASE:  8-SMD, FLAT LEAD EXPOSED PAD

PACKAGING:  REEL

POWER - MAX:  1W

RDS ON (MAX) @ ID, VGS:  14 MOHM @ 16.5A, 10V

ROHS INFORMATION:  ROHS COMPLIANCE

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-HSON

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA