ADDITIONAL FEATURE:  100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS

DATA RETENTION TIME-MIN:  10

ENDURANCE:  100000 WRITE/ERASE CYCLES

JESD-30 CODE:  R-PDIP-T8

LENGTH:  9.3 MM

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  BR93LC46A

MEMORY DENSITY:  1.024 KBIT

MEMORY IC TYPE:  EEPROM

MEMORY WIDTH:  16

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  8

NUMBER OF WORDS:  64 WORDS

NUMBER OF WORDS CODE:  64

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  64X16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  DIP

PACKAGE DESCRIPTION:  DIP, DIP8,.3

PACKAGE EQUIVALENCE CODE:  DIP8,.3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PARALLEL/SERIAL:  SERIAL

PART PACKAGE CODE:  DIP

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  8

POWER SUPPLIES:  5 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  3.7 MM

SERIAL BUS TYPE:  MICROWIRE

STANDBY CURRENT-MAX:  5 ΜA

SUBCATEGORY:  EEPROMS

SUPPLY CURRENT-MAX:  3 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  5.5 V

SUPPLY VOLTAGE-MIN (VSUP):  4.5 V

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  NO

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FORM:  THROUGH-HOLE

TERMINAL PITCH:  2.54 MM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  7.62 MM

WRITE PROTECTION:  SOFTWARE