Electronic Component
EMB9T2R
PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 PNP - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW SURFACE MOUNT EMT6Availability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 68 @ 5MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 PNP - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW SURFACE MOUNT EMT6
FREQUENCY - TRANSITION: 250MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: EMB9T2R
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SOT-563, SOT-666
PACKAGING: REEL
POWER - MAX: 150MW
RESISTOR - BASE (R1): 10 KOHMS
RESISTOR - EMITTER BASE (R2): 47 KOHMS
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: EMT6
TRANSISTOR TYPE: 2 PNP - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 300MV @ 250ΜA, 5MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V

