Electronic Component
IMH9AT110
PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 250MHZ 300MW SURFACE MOUNT SMT6Availability
- Qty in StockCall for availability
- Min. Order Qty1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 68 @ 5MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 250MHZ 300MW SURFACE MOUNT SMT6
FREQUENCY - TRANSITION: 250MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: IMH9AT110
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SC-74, SOT-457
PACKAGING: REEL
POWER - MAX: 300MW
RESISTOR - BASE (R1) (OHMS): 10K
RESISTOR - EMITTER BASE (R2) (OHMS): 47K
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: SMT6
TRANSISTOR TYPE: 2 NPN - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 300MV @ 250ΜA, 5MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V

