PTZTE2515B

PTZTE2515B

R-PDSO-C2

Call for availability

Manufactured by:

ROHM SEMICONDUCTOR

Mfr Part#:  PTZTE2515B

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-C2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

ADDITIONAL FEATURE:  HIGH SURGE WITHSTAND LEVEL

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  ZENER DIODE

DYNAMIC IMPEDANCE-MAX:  10 O

JESD-30 CODE:  R-PDSO-C2

JESD-609 CODE:  E1

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  PTZTE2515B

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-C2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POLARITY:  UNIDIRECTIONAL

POWER DISSIPATION (MAX):  1 W

QUALIFICATION STATUS:  NOT QUALIFIED

REFERENCE VOLTAGE-NOM:  15.6 V

REVERSE CURRENT-MAX:  10 ΜA

SUBCATEGORY:  VOLTAGE REFERENCE DIODES

SURFACE MOUNT:  YES

TECHNOLOGY:  ZENER

TERMINAL FINISH:  TIN SILVER COPPER

TERMINAL FORM:  C BEND

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  10

VOLTAGE TOL-MAX:  5.77 %

WORKING TEST CURRENT:  20 MA

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