CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  76A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  260NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  6500PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  R6076ENZ1C9

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-247-3

PACKAGING:  TUBE

POWER - MAX:  120W

RDS ON (MAX) @ ID, VGS:  42 MOHM @ 44.4A, 10V

STANDARD PACKAGE:  450

SUPPLIER DEVICE PACKAGE:  TO-247

VGS(TH) (MAX) @ ID:  4V @ 1MA