CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 800V 2A (TC) 35W (TC) THROUGH HOLE TO-220FM

DRAIN TO SOURCE VOLTAGE (VDSS):  800V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOR8002ANX ESD DATATO-220FM CONSTITUTION MATERIAL LIST

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  12.7NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  210PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  R8002ANX

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-220-3 FULL PACK

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  35W (TC)

RDS ON (MAX) @ ID, VGS:  4.3 OHM @ 1A, 10V

SIMULATION MODELS:  R8002ANX SPICE MODELR8002ANX THERMAL MODEL

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  TO-220FM

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 1MA