CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  200MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 200MA (TA) 200MW (TA) SURFACE MOUNT UMT3

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  4.4NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  15PF @ 10V

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RHU002N06T106

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  SC-70, SOT-323

PACKAGING:  REEL

POWER DISSIPATION (MAX):  200MW (TA)

RDS ON (MAX) @ ID, VGS:  2.4 OHM @ 200MA, 10V

SUPPLIER DEVICE PACKAGE:  UMT3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V