CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6.5A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 20V 6.5A (TA) 700MW (TA) SURFACE MOUNT TSMT8

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.5V, 4.5V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORQ1C065UN ESD DATATSMT8-HF CONSTITUTION MATERIAL LIST

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  11NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  870PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RQ1C065UNTR

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  8-SMD, FLAT LEAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  700MW (TA)

RDS ON (MAX) @ ID, VGS:  22 MOHM @ 6.5A, 4.5V

SIMULATION MODELS:  RQ1C065UN SPICE MODELRQ1C065UN THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TSMT8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±10V

VGS(TH) (MAX) @ ID:  1V @ 1MA