CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 30V 5A (TA) 1.25W (TA) SURFACE MOUNT TSMT6 (SC-95)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORQ6E050AT ESD DATATSMT6M-CU-HF CONSTITUTION MATERIAL LIST

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  20.8NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  940PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RQ6E050ATTCR

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.25W (TA)

RDS ON (MAX) @ ID, VGS:  27 MOHM @ 5A, 10V

SIMULATION MODELS:  RQ6E050AT SPICE MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TSMT6 (SC-95)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 1MA