CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 2A (TA) 600MW (TA) SURFACE MOUNT TSMT6 (SC-95)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4V, 10V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORSQ020N03 ESD DATATSMT6 CONSTITUTION MATERIAL LIST

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  3.1NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  110PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RSQ020N03TR

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  600MW (TA)

RDS ON (MAX) @ ID, VGS:  134 MOHM @ 2A, 10V

SIMULATION MODELS:  RSQ020N03 SPICE MODELRSQ020N03 THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TSMT6 (SC-95)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 1MA