CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  200MA (TA)

DETAILED DESCRIPTION:  P-CHANNEL 20V 200MA (TA) 150MW (TA) SURFACE MOUNT UMT3F

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.2V, 4.5V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORU1C002ZP ESD DATAUMT3FM-HF CONSTITUTION MATERIAL LIST

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  1.4NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  115PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RU1C002ZPTCL

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  SC-85

PACKAGING:  REEL

POWER DISSIPATION (MAX):  150MW (TA)

RDS ON (MAX) @ ID, VGS:  1.2 OHM @ 200MA, 4.5V

SIMULATION MODELS:  RU1C002ZP SPICE MODELRU1C002ZP THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  UMT3F

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±10V

VGS(TH) (MAX) @ ID:  1V @ 100ΜA