CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  200MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 20V 200MA (TA) 150MW (TA) SURFACE MOUNT VMT3

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.2V, 2.5V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORUM002N02 ESD DATAVMT3 CONSTITUTION MATERIAL LIST

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  25PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RUM002N02T2L

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  SOT-723

PACKAGING:  REEL

POWER DISSIPATION (MAX):  150MW (TA)

RDS ON (MAX) @ ID, VGS:  1.2 OHM @ 200MA, 2.5V

SIMULATION MODELS:  RUM002N02 SPICE MODELRUM002N02 THERMAL MODEL

STANDARD PACKAGE:  8,000

SUPPLIER DEVICE PACKAGE:  VMT3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 1MA